| PART |
Description |
Maker |
| K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz
64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY5V66GF HY5V66GF-H HY5V66GF-P |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM
4Mx16|3.3V|4K|H|SDR SDRAM - 64M
x16 SDRAM x16内存
|
Hynix Semiconductor
TT electronics Semelab, Ltd.
|
| MT48LC4M16A2P-6A |
64Mb: x4, x8, x16 SDRAM
|
Micron Technology
|
| W3DG647V-D2 W3DG647V7D2 W3DG647V75D2 W3DG647V10D2 |
64MB- 8Mx64 SDRAM UNBUFFERED
|
White Electronic Design...
WEDC[White Electronic Designs Corporation]
|
| W3DG648V75D1 W3DG648V10D1 W3DG648V-D1 W3DG648V7D1 |
64MB - 2x4Mx64 SDRAM, UNBUFFERED
|
White Electronic Designs Corporation
|
| W3DG7216V7D2 W3DG7216V75D2 W3DG7216V10D2 W3DG7216V |
64MB- 8Mx72 SDRAM W/ PLL, REGISTER AND SPD
|
White Electronic Designs Corporation
|
| K4S643232H K4S643232H-TC_L60 K4S643232H-TC60 K4S64 |
2M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86
64Mb H-die (x32) SDRAM Specification 64芯片（X32号）内存规格
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| MD5764802 MSM5718C50_MD5764802 MSM5764802 MSM5718C |
64Mb(8Mx8) concurrent RDRAM
From old datasheet system
(MSM5718C50 / MSM5764802) 18Mb (2M x 9) & 64Mb (8M x 8) Concurrent RDRAM
18Mb(2Mx9) concurrent RDRAM
|
OKI[OKI electronic componets]
OKI electronic components
|
| W981216BH W981216 W981216BH-75 W981216BH-75I W9812 |
2M x 4 Banks x 16 Bit SDRAM
Low Power SDRAM
Industrial SDRAM
2M x 4 BANKS x 16 BIT SDRAM
DRAM - Datasheet Reference
|
Winbond Electronics Corp
WINBOND[Winbond]
|
| HB52RD648DC-B HB52RF648DC-B HB52RD648DC-B6BL HB52R |
512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 8 components) PC133/100 SDRAM
512M; 100MHz LVTTL interface SDRAM
512M; 133MHz LVTTL interface SDRAM
|
Elpida Memory
|
